Information card for entry 4071264

Structure parameters

• Formula: C31 H60 Ga2 Si
• Calculated formula: C31 H60 Ga2 Si
• SMILES: [Ga](CC(C)(C)C)(CC(C)(C)C)C([Ga](CC(C)(C)C)CC(C)(C)C)([Si](C)(C)C)Cc1ccccc1
• Title of publication: A Carbon-Bridged Digallium Compound as a Chelating Lewis Acid: Complexation of Thiophenolate and Benzoate Anions by H5C6−CH2−C(SiMe3)[Ga(CH2tBu)2]2
• Authors of publication: Uhl, Werner; Claesener, Michael; Hepp, Alexander
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 9
• Pages of publication: 2118
• a: 12.1123 ± 0.0019 Å
• b: 18.898 ± 0.003 Å
• c: 15.118 ± 0.002 Å
• α: 90°
• β: 97.756 ± 0.003°
• γ: 90°
• Cell volume: 3428.8 ± 0.9 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 153 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0678
• Residual factor for significantly intense reflections: 0.0428
• Weighted residual factors for significantly intense reflections: 0.0921
• Weighted residual factors for all reflections included in the refinement: 0.1018
• Goodness-of-fit parameter for all reflections included in the refinement: 0.983
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No