Information card for entry 4071542

Structure parameters

• Formula: C28 H47 Cl N P2 Rh Si
• Calculated formula: C28 H47 Cl N P2 Rh Si
• SMILES: [RhH]12([P](c3cc(ccc3N2c2ccc(cc2[P]1(C(C)C)C(C)C)C)C)(C(C)C)C(C)C)[Si](Cl)(C)C
• Title of publication: Oxidative Addition Reactions of Silyl Halides with the (PNP)Rh Fragment
• Authors of publication: Gatard, Sylvain; Chen, Chun-Hsing; Foxman, Bruce M.; Ozerov, Oleg V.
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 23
• Pages of publication: 6257
• a: 30.0033 ± 0.0008 Å
• b: 11.4958 ± 0.0003 Å
• c: 18.824 ± 0.0005 Å
• α: 90°
• β: 111.205 ± 0.001°
• γ: 90°
• Cell volume: 6053 ± 0.3 ų
• Cell temperature: 120 K
• Ambient diffraction temperature: 120 K
• Number of distinct elements: 7
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.034
• Residual factor for significantly intense reflections: 0.0271
• Weighted residual factors for all reflections: 0.0644
• Weighted residual factors for significantly intense reflections: 0.0625
• Weighted residual factors for all reflections included in the refinement: 0.0644
• Goodness-of-fit parameter for all reflections included in the refinement: 0.9732
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No