Information card for entry 4071850

Structure parameters

• Common name: 6c
• Formula: C17 H33 N4 O2 Si
• Calculated formula: C17 H32 N4 O2 Si
• SMILES: CC1CC(C)(C)N2N=C(C(C)(C)C)O[Si]32(C)[N]=1N=C(C(C)(C)C)O3
• Title of publication: Hydride Migration from Silicon to an Adjacent Unsaturated Imino Carbon: Intramolecular Hydrosilylation
• Authors of publication: Kertsnus-Banchik, Evgenia; Kalikhman, Inna; Gostevskii, Boris; Deutsch, Zvicka; Botoshansky, Mark; Kost, Daniel
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 20
• Pages of publication: 5285
• a: 9.683 ± 0.002 Å
• b: 11.351 ± 0.002 Å
• c: 11.49 ± 0.002 Å
• α: 115.096 ± 0.003°
• β: 110.27 ± 0.003°
• γ: 95.533 ± 0.004°
• Cell volume: 1027.9 ± 0.3 ų
• Cell temperature: 103 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0631
• Residual factor for significantly intense reflections: 0.0576
• Weighted residual factors for significantly intense reflections: 0.1698
• Weighted residual factors for all reflections included in the refinement: 0.1768
• Goodness-of-fit parameter for all reflections included in the refinement: 1.062
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No