Information card for entry 4072262

Structure parameters

• Formula: C23 H32 P2 Si V
• Calculated formula: C23 H32 P2 Si V
• SMILES: [V]12345([P](CC[P]1(C)C)(C)C)([SiH](c1ccccc1)c1ccccc1)[cH]1[cH]2[cH]3[cH]5[cH]41
• Title of publication: Paramagnetic Vanadium Silyl Complexes: Synthesis, Structure, and Reactivity
• Authors of publication: Shinohara, Akihiro; McBee, Jennifer; Waterman, Rory; Tilley, T. Don
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 21
• Pages of publication: 5717
• a: 10.1297 ± 0.0011 Å
• b: 8.8751 ± 0.001 Å
• c: 26.927 ± 0.003 Å
• α: 90°
• β: 100.262 ± 0.002°
• γ: 90°
• Cell volume: 2382.1 ± 0.5 ų
• Cell temperature: 147 ± 2 K
• Ambient diffraction temperature: 147 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0647
• Residual factor for significantly intense reflections: 0.0427
• Weighted residual factors for significantly intense reflections: 0.0784
• Weighted residual factors for all reflections included in the refinement: 0.0848
• Goodness-of-fit parameter for all reflections included in the refinement: 0.931
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No