Information card for entry 4072263

Structure parameters

• Formula: C20 H34 P2 Si V
• Calculated formula: C20 H34 P2 Si V
• SMILES: [V]12345([P](C)(CC[P]1(C)C)C)([cH]1[cH]5[cH]2[cH]3[cH]41)[SiH2]c1c(cc(cc1C)C)C
• Title of publication: Paramagnetic Vanadium Silyl Complexes: Synthesis, Structure, and Reactivity
• Authors of publication: Shinohara, Akihiro; McBee, Jennifer; Waterman, Rory; Tilley, T. Don
• Journal of publication: Organometallics
• Year of publication: 2008
• Journal volume: 27
• Journal issue: 21
• Pages of publication: 5717
• a: 15.365 ± 0.006 Å
• b: 17.074 ± 0.006 Å
• c: 17.199 ± 0.007 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 4512 ± 3 ų
• Cell temperature: 152 ± 2 K
• Ambient diffraction temperature: 152 ± 2 K
• Number of distinct elements: 5
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.1133
• Residual factor for significantly intense reflections: 0.0607
• Weighted residual factors for significantly intense reflections: 0.108
• Weighted residual factors for all reflections included in the refinement: 0.1237
• Goodness-of-fit parameter for all reflections included in the refinement: 0.992
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No