Information card for entry 4072578

Structure parameters

• Formula: C105 H162 Cl2 O44 Os6 Si14
• Calculated formula: C105 H156 Cl2 O44 Os6 Si14
• Title of publication: Synthesis and Characterization of Osmium-Containing Silsesquioxanes: High-Yield Routes to {Os3(CO)10(μ-H)[(μ-O)Si7O10(c-C6H11)7]} and the New Clusters {Os3(CO)10(μ-H)[(μ-O)Si7O9(OH)2(c-C6H11)7]}, {[Os3(CO)10(μ-H)]2(μ-O)2Si7O9(OH)(c-C6H11)7}, {Os3(CO)10(μ-H)[(μ-O)Si8O11(OH)(c-C6H11)8]}, and {[Os3(CO)10(μ-H)]2(μ-O)2Si8O11(c-C6H11)8}
• Authors of publication: Lucenti, Elena; Feher, Frank J.; Ziller, Joseph W.
• Journal of publication: Organometallics
• Year of publication: 2007
• Journal volume: 26
• Journal issue: 1
• Pages of publication: 75
• a: 15.8524 ± 0.0007 Å
• b: 25.8552 ± 0.0012 Å
• c: 33.6161 ± 0.0015 Å
• α: 90°
• β: 90.602 ± 0.001°
• γ: 90°
• Cell volume: 13777.4 ± 1.1 ų
• Cell temperature: 158 ± 2 K
• Ambient diffraction temperature: 158 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0509
• Residual factor for significantly intense reflections: 0.0354
• Weighted residual factors for significantly intense reflections: 0.0779
• Weighted residual factors for all reflections included in the refinement: 0.0836
• Goodness-of-fit parameter for all reflections included in the refinement: 1.069
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No