Information card for entry 4072888

Structure parameters

• Formula: C28 H52 Ga2 Si2
• Calculated formula: C28 H52 Ga2 Si2
• SMILES: C(=C\c1ccc(/C=C([Ga](C(C)C)C(C)C)/[Si](C)(C)C)cc1)(\[Ga](C(C)C)C(C)C)[Si](C)(C)C
• Title of publication: Hydrogallation of Trimethylsilylethynylbenzenes: Generation of Potential Di- and Tripodal Chelating Lewis Acids
• Authors of publication: Uhl, Werner; Bock, Henrik R.; Breher, Frank; Claesener, Michael; Haddadpour, Sima; Jasper, Beate; Hepp, Alexander
• Journal of publication: Organometallics
• Year of publication: 2007
• Journal volume: 26
• Journal issue: 9
• Pages of publication: 2363
• a: 8.6786 ± 0.0014 Å
• b: 8.8599 ± 0.0015 Å
• c: 11.516 ± 0.002 Å
• α: 72.672 ± 0.017°
• β: 73.845 ± 0.017°
• γ: 83.406 ± 0.017°
• Cell volume: 811.4 ± 0.3 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0656
• Residual factor for significantly intense reflections: 0.058
• Weighted residual factors for significantly intense reflections: 0.1479
• Weighted residual factors for all reflections included in the refinement: 0.1562
• Goodness-of-fit parameter for all reflections included in the refinement: 1.048
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No