Information card for entry 4072889

Structure parameters

• Formula: C32 H60 Ga2 Si2
• Calculated formula: C32 H60 Ga2 Si2
• SMILES: C(=C\c1ccc(/C=C(/[Ga](C(C)(C)C)C(C)(C)C)[Si](C)(C)C)cc1)([Ga](C(C)(C)C)C(C)(C)C)\[Si](C)(C)C
• Title of publication: Hydrogallation of Trimethylsilylethynylbenzenes: Generation of Potential Di- and Tripodal Chelating Lewis Acids
• Authors of publication: Uhl, Werner; Bock, Henrik R.; Breher, Frank; Claesener, Michael; Haddadpour, Sima; Jasper, Beate; Hepp, Alexander
• Journal of publication: Organometallics
• Year of publication: 2007
• Journal volume: 26
• Journal issue: 9
• Pages of publication: 2363
• a: 17.144 ± 0.007 Å
• b: 9.001 ± 0.004 Å
• c: 12.23 ± 0.005 Å
• α: 90°
• β: 101.642 ± 0.007°
• γ: 90°
• Cell volume: 1848.4 ± 1.3 ų
• Cell temperature: 153 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1038
• Residual factor for significantly intense reflections: 0.0497
• Weighted residual factors for significantly intense reflections: 0.102
• Weighted residual factors for all reflections included in the refinement: 0.119
• Goodness-of-fit parameter for all reflections included in the refinement: 1.007
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No