Information card for entry 4074894

Structure parameters

• Common name: 4
• Chemical name: Bis[N-(dimethylamino)benzimidato-N,O]diphenylsilicon(IV)
• Formula: C30 H32 N4 O2 Si
• Calculated formula: C30 H32 N4 O2 Si
• SMILES: [Si](OC(=NN(C)C)c1ccccc1)(OC(=NN(C)C)c1ccccc1)(c1ccccc1)c1ccccc1
• Title of publication: Octahedral and Bicapped-Tetrahedral Silicon Configurations in the Solid State and Their Dynamic Coexistence in Solution
• Authors of publication: Kalikhman, Inna; Gostevskii, Boris; Botoshansky, Mark; Kaftory, Menahem; Tessier, Claire A.; Panzner, Matthew J.; Youngs, Wiley J.; Kost, Daniel
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 5
• Pages of publication: 1252 - 1258
• a: 10.367 ± 0.002 Å
• b: 25.806 ± 0.005 Å
• c: 11.119 ± 0.002 Å
• α: 90°
• β: 108.74 ± 0.03°
• γ: 90°
• Cell volume: 2817 ± 1 ų
• Cell temperature: 230 ± 1 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0958
• Residual factor for significantly intense reflections: 0.0472
• Weighted residual factors for significantly intense reflections: 0.1096
• Weighted residual factors for all reflections included in the refinement: 0.1254
• Goodness-of-fit parameter for all reflections included in the refinement: 0.962
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No