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Information card for entry 4074897
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Coordinates | 4074897.cif |
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Original paper (by DOI) | HTML |
Common name | 8 |
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Chemical name | Bis[N-(cyclopentylideneimino)acetimidato-N,O]dimethylsilicon(IV) |
Formula | C16 H28 N4 O2 Si |
Calculated formula | C16 H28 N4 O2 Si |
SMILES | C1(=N[N]([Si]2(C)(O1)(C)[N](=C1CCCC1)N=C(C)O2)=C1CCCC1)C |
Title of publication | Octahedral and Bicapped-Tetrahedral Silicon Configurations in the Solid State and Their Dynamic Coexistence in Solution |
Authors of publication | Kalikhman, Inna; Gostevskii, Boris; Botoshansky, Mark; Kaftory, Menahem; Tessier, Claire A.; Panzner, Matthew J.; Youngs, Wiley J.; Kost, Daniel |
Journal of publication | Organometallics |
Year of publication | 2006 |
Journal volume | 25 |
Journal issue | 5 |
Pages of publication | 1252 - 1258 |
a | 13.576 ± 0.0009 Å |
b | 8.0012 ± 0.0005 Å |
c | 16.4807 ± 0.0011 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 1790.2 ± 0.2 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 5 |
Space group number | 60 |
Hermann-Mauguin space group symbol | P b c n |
Hall space group symbol | -P 2n 2ab |
Residual factor for all reflections | 0.042 |
Residual factor for significantly intense reflections | 0.0402 |
Weighted residual factors for significantly intense reflections | 0.1028 |
Weighted residual factors for all reflections included in the refinement | 0.1039 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.109 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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