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Information card for entry 4074896
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Coordinates | 4074896.cif |
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Original paper (by DOI) | HTML |
Common name | 6 |
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Chemical name | Bis[N-(isopropylideneimino)acetimidato-N,O]diphenylsilicon(IV) |
Formula | C22 H28 N4 O2 Si |
Calculated formula | C22 H28 N4 O2 Si |
SMILES | [Si]12(OC(=N[N]1=C(C)C)C)(OC(=N[N]2=C(C)C)C)(c1ccccc1)c1ccccc1 |
Title of publication | Octahedral and Bicapped-Tetrahedral Silicon Configurations in the Solid State and Their Dynamic Coexistence in Solution |
Authors of publication | Kalikhman, Inna; Gostevskii, Boris; Botoshansky, Mark; Kaftory, Menahem; Tessier, Claire A.; Panzner, Matthew J.; Youngs, Wiley J.; Kost, Daniel |
Journal of publication | Organometallics |
Year of publication | 2006 |
Journal volume | 25 |
Journal issue | 5 |
Pages of publication | 1252 - 1258 |
a | 9.225 ± 0.002 Å |
b | 10.709 ± 0.002 Å |
c | 22.519 ± 0.004 Å |
α | 90° |
β | 99.66 ± 0.03° |
γ | 90° |
Cell volume | 2193.1 ± 0.8 Å3 |
Cell temperature | 230 ± 1 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.1366 |
Residual factor for significantly intense reflections | 0.0617 |
Weighted residual factors for significantly intense reflections | 0.15 |
Weighted residual factors for all reflections included in the refinement | 0.1775 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.963 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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