Information card for entry 4075712

Structure parameters

• Formula: C32 H56 Mg N2 O2 Si2
• Calculated formula: C32 H56 Mg N2 O2 Si2
• SMILES: [Mg](N([Si](C)(C)C)c1c(cc(cc1C)C)C)(N([Si](C)(C)C)c1c(cc(cc1C)C)C)([O]1CCCC1)[O]1CCCC1
• Title of publication: Synthesis and Structural Characterization of Magnesium Amide Complexes Containing −N[(R)(SiMe3)] Ligands
• Authors of publication: Tang, Yongjun; Zakharov, Lev N.; Rheingold, Arnold L.; Kemp, Richard A.
• Journal of publication: Organometallics
• Year of publication: 2005
• Journal volume: 24
• Journal issue: 5
• Pages of publication: 836
• a: 13.4473 ± 0.0008 Å
• b: 16.0187 ± 0.0009 Å
• c: 16.3754 ± 0.0009 Å
• α: 90°
• β: 101.875 ± 0.001°
• γ: 90°
• Cell volume: 3451.9 ± 0.3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0576
• Residual factor for significantly intense reflections: 0.047
• Weighted residual factors for significantly intense reflections: 0.1165
• Weighted residual factors for all reflections included in the refinement: 0.121
• Goodness-of-fit parameter for all reflections included in the refinement: 1.158
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No