Information card for entry 4075834

Structure parameters

• Formula: C64 H90 O Si4
• Calculated formula: C64 H90 O Si4
• SMILES: [Si]([Si](C)(C)C)([Si](C)(C)C)(C#Cc1c(C)cc(C)cc1C)/C=C(c1c(C)cc(C)cc1C)\CC(/c1c(C)cc(C)cc1C)=C/C(=C(\O[Si](C)(C)C)C12CC3CC(CC(C1)C3)C2)c1c(C)cc(C)cc1C
• Title of publication: Silicon−Carbon Unsaturated Compounds. 70. Thermolysis and Photolysis of Acylpolysilanes with Mesitylacetylene
• Authors of publication: Naka, Akinobu; Ohnishi, Hidenobu; Ohshita, Joji; Ikadai, Junnai; Kunai, Atsutaka; Ishikawa, Mitsuo
• Journal of publication: Organometallics
• Year of publication: 2005
• Journal volume: 24
• Journal issue: 22
• Pages of publication: 5356
• a: 13.128 ± 0.003 Å
• b: 46.24 ± 0.01 Å
• c: 10.72 ± 0.003 Å
• α: 90°
• β: 102.89 ± 0.02°
• γ: 90°
• Cell volume: 6343 ± 3 ų
• Cell temperature: 298.1 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for significantly intense reflections: 0.064
• Weighted residual factors for all reflections included in the refinement: 0.059
• Goodness-of-fit parameter for all reflections included in the refinement: 1.342
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No