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Information card for entry 4078994
Preview
Coordinates | 4078994.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C48 H92 F N O28 Si8 |
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Calculated formula | C48 H92 F N O28 Si8 |
SMILES | [F-].O1[Si]2(O[Si]3(O[Si]4(O[Si]1(O[Si]1(O[Si](O2)(O[Si](O[Si](O1)(O4)CCC(=O)OC)(O3)CCC(=O)OC)CCC(=O)OC)CCC(=O)OC)CCC(=O)OC)CCC(=O)OC)CCC(=O)OC)CCC(=O)OC.C(CCC)[N+](CCCC)(CCCC)CCCC |
Title of publication | Facile Synthesis of Novel Functionalized Silsesquioxane Nanostructures Containing an Encapsulated Fluoride Anion |
Authors of publication | El Aziz, Youssef; Bassindale, Alan R.; Taylor, Peter G.; Horton, Peter N.; Stephenson, Richard A.; Hursthouse, Michael B. |
Journal of publication | Organometallics |
Year of publication | 2012 |
Journal volume | 31 |
Journal issue | 17 |
Pages of publication | 6032 |
a | 20.5416 ± 0.0002 Å |
b | 14.5201 ± 0.0002 Å |
c | 25.3577 ± 0.0003 Å |
α | 90° |
β | 111.36 ± 0.001° |
γ | 90° |
Cell volume | 7043.82 ± 0.15 Å3 |
Cell temperature | 160 ± 2 K |
Ambient diffraction temperature | 160 ± 2 K |
Number of distinct elements | 6 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0487 |
Residual factor for significantly intense reflections | 0.0433 |
Weighted residual factors for significantly intense reflections | 0.1117 |
Weighted residual factors for all reflections included in the refinement | 0.1153 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.036 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4078994.html
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Users of the data should acknowledge the original authors of the
structural data.