Information card for entry 4080004

Structure parameters

• Formula: C44 H56 N4 Si
• Calculated formula: C44 H56 N4 Si
• SMILES: [Si]1([N](=C(N1C(C)(C)C)c1ccccc1)C(C)(C)C)(N(c1ccccc1)c1ccccc1)=NC12CC3CC(C1)CC(C3)C2.c1(ccccc1)C
• Title of publication: Reactivity Studies of Heteroleptic Silylenes PhC(NtBu)2SiX (X = NPh2, NMe2) toward Selected Azides
• Authors of publication: Azhakar, Ramachandran; Roesky, Herbert W.; Holstein, Julian J.; Pröpper, Kevin; Dittrich, Birger
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 1
• Pages of publication: 358
• a: 10.8224 ± 0.0002 Å
• b: 11.3612 ± 0.0002 Å
• c: 17.1797 ± 0.0003 Å
• α: 97.594 ± 0.001°
• β: 90.332 ± 0.001°
• γ: 117.158 ± 0.001°
• Cell volume: 1857.73 ± 0.06 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0423
• Residual factor for significantly intense reflections: 0.0392
• Weighted residual factors for significantly intense reflections: 0.0997
• Weighted residual factors for all reflections included in the refinement: 0.1179
• Goodness-of-fit parameter for all reflections included in the refinement: 1.139
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No