Information card for entry 4080069

Structure parameters

• Formula: C35 H61 P2 Rh Si
• Calculated formula: C35 H61 P2 Rh Si
• SMILES: c1(c(cc(cc1C)C)C)[SiH](c1c(cc(cc1C)C)C)[Rh]1[P](C[P]1(C(C)(C)C)C(C)(C)C)(C(C)(C)C)C(C)(C)C
• Title of publication: Multiple Si‒H Bond Activations bytBu2PCH2CH2PtBu2andtBu2PCH2PtBu2Di(phosphine) Complexes of Rhodium and Iridium
• Authors of publication: Fasulo, Meg E.; Calimano, Elisa; Buchanan, J. Matthew; Tilley, T. Don
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 4
• Pages of publication: 1016
• a: 16.5825 ± 0.0006 Å
• b: 19.588 ± 0.0008 Å
• c: 21.8479 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 7096.6 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0454
• Residual factor for significantly intense reflections: 0.0306
• Weighted residual factors for significantly intense reflections: 0.0694
• Weighted residual factors for all reflections included in the refinement: 0.078
• Goodness-of-fit parameter for all reflections included in the refinement: 1.13
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No