Information card for entry 4083102

Structure parameters

• Formula: C45 H36 F24 O9 Si2
• Calculated formula: C45 H36 F24 O9 Si2
• SMILES: [Si]12([Si]34([OH]C(c5c3cccc5)(C(F)(F)F)C(F)(F)F)OC(c3c4cccc3)(C(F)(F)F)C(F)(F)F)([OH]C(c3c1cccc3)(C(F)(F)F)C(F)(F)F)OC(c1c2cccc1)(C(F)(F)F)C(F)(F)F.CC(=O)C.CC(=O)C.CC(=O)C.O.O
• Title of publication: Synthesis and Isolation of a Silylsilicate Containing Two Pentacoordinated Silicon Atoms by Monoprotonation of a Disilicate and Monodeprotonation of a Disilane
• Authors of publication: Kano, Naokazu; Sasaki, Keishi; Miyake, Hideaki; Kawashima, Takayuki
• Journal of publication: Organometallics
• Year of publication: 2014
• Journal volume: 33
• Journal issue: 9
• Pages of publication: 2358
• a: 39.272 ± 0.014 Å
• b: 28.384 ± 0.009 Å
• c: 36.443 ± 0.012 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 40623 ± 2 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 5
• Space group number: 43
• Hermann-Mauguin space group symbol: F d d 2
• Hall space group symbol: F 2 -2d
• Residual factor for all reflections: 0.0968
• Residual factor for significantly intense reflections: 0.0658
• Weighted residual factors for significantly intense reflections: 0.1464
• Weighted residual factors for all reflections included in the refinement: 0.166
• Goodness-of-fit parameter for all reflections included in the refinement: 0.992
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No