Information card for entry 4086158

Structure parameters

• Formula: C94 H102 Ge2 N2 Si4
• Calculated formula: C94 H102 Ge2 N2 Si4
• SMILES: [Ge](N([Si](C)(C)C)c1c(cc(cc1C(c1ccccc1)c1ccccc1)C)C(c1ccccc1)c1ccccc1)/C(=C(\[Ge]N([Si](C)(C)C)c1c(cc(cc1C(c1ccccc1)c1ccccc1)C)C(c1ccccc1)c1ccccc1)[Si](C)(C)C)C#C[Si](C)(C)C.c1ccccc1.c1ccccc1
• Title of publication: Reactivity of Amido-Digermynes, LGeGeL (L = Bulky Amide), toward Olefins and Related Molecules: Facile Reduction, C‒H Activation, and Reversible Cycloaddition of Unsaturated Substrates
• Authors of publication: Hadlington, Terrance J.; Li, Jiaye; Hermann, Markus; Davey, Amelia; Frenking, Gernot; Jones, Cameron
• Journal of publication: Organometallics
• Year of publication: 2015
• Journal volume: 34
• Journal issue: 13
• Pages of publication: 3175
• a: 13.0683 ± 0.0007 Å
• b: 16.4136 ± 0.0006 Å
• c: 20.0153 ± 0.0008 Å
• α: 77.588 ± 0.002°
• β: 78.329 ± 0.002°
• γ: 83.338 ± 0.002°
• Cell volume: 4094.4 ± 0.3 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1274
• Residual factor for significantly intense reflections: 0.0589
• Weighted residual factors for significantly intense reflections: 0.1138
• Weighted residual factors for all reflections included in the refinement: 0.1377
• Goodness-of-fit parameter for all reflections included in the refinement: 1.021
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No