Information card for entry 4101604

Structure parameters

• Formula: C20 H8 S3
• Calculated formula: C20 H8 S3
• SMILES: s1c2ccc3ccc4ssc5ccc6ccc1c1c2c3c4c5c61
• Title of publication: Solution-Processed, High-Performance Nanoribbon Transistors Based on Dithioperylene
• Authors of publication: Jiang, Wei; Zhou, Yan; Geng, Hua; Jiang, Shidong; Yan, Shouke; Hu, Wenping; Wang, Zhaohui; Shuai, Zhigang; Pei, Jian
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2011
• Journal volume: 133
• Journal issue: 1
• Pages of publication: 1 - 3
• a: 10.017 ± 0.002 Å
• b: 12.087 ± 0.002 Å
• c: 12.384 ± 0.003 Å
• α: 90°
• β: 109.61 ± 0.03°
• γ: 90°
• Cell volume: 1412.4 ± 0.6 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.088
• Residual factor for significantly intense reflections: 0.0772
• Weighted residual factors for significantly intense reflections: 0.1892
• Weighted residual factors for all reflections included in the refinement: 0.1976
• Goodness-of-fit parameter for all reflections included in the refinement: 1.123
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No