Information card for entry 4101605

Structure parameters

• Formula: C20 H8 S2
• Calculated formula: C20 H8 S2
• SMILES: S1c2ccc3ccc4c5c3c2c2c3c(ccc(c53)S4)ccc12
• Title of publication: Solution-Processed, High-Performance Nanoribbon Transistors Based on Dithioperylene
• Authors of publication: Jiang, Wei; Zhou, Yan; Geng, Hua; Jiang, Shidong; Yan, Shouke; Hu, Wenping; Wang, Zhaohui; Shuai, Zhigang; Pei, Jian
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2011
• Journal volume: 133
• Journal issue: 1
• Pages of publication: 1 - 3
• a: 9.6585 ± 0.0019 Å
• b: 4.3731 ± 0.0009 Å
• c: 15.436 ± 0.003 Å
• α: 90°
• β: 98.37 ± 0.03°
• γ: 90°
• Cell volume: 645 ± 0.2 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 3
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.064
• Residual factor for significantly intense reflections: 0.0564
• Weighted residual factors for significantly intense reflections: 0.146
• Weighted residual factors for all reflections included in the refinement: 0.1523
• Goodness-of-fit parameter for all reflections included in the refinement: 1.126
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No