Crystallography Open Database

Information card for entry 4102592

Preview

Coordinates	4102592.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	Ho3 O3 Sb
Calculated formula	Ho3 O3 Sb
Title of publication	Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE3SbO3 and RE8Sb3-δO8, with RE = La, Sm, Gd, and Ho
Authors of publication	Peng Wang; Scott Forbes; Taras Kolodiazhnyi; Kosuke Kosuda; Yurij Mozharivskyj
Journal of publication	Journal of the American Chemical Society
Year of publication	2010
Journal volume	132
Pages of publication	8795 - 8803
a	13.014 ± 0.003 Å
b	3.8218 ± 0.0007 Å
c	11.679 ± 0.002 Å
α	90°
β	118.213 ± 0.014°
γ	90°
Cell volume	511.87 ± 0.19 Å³
Cell temperature	293 ± 2 K
Ambient diffraction temperature	293 ± 2 K
Number of distinct elements	3
Space group number	12
Hermann-Mauguin space group symbol	C 1 2/m 1
Hall space group symbol	-C 2y
Residual factor for all reflections	0.1185
Residual factor for significantly intense reflections	0.0518
Weighted residual factors for significantly intense reflections	0.0788
Weighted residual factors for all reflections included in the refinement	0.0943
Goodness-of-fit parameter for all reflections included in the refinement	0.914
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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