Crystallography Open Database

Information card for entry 4102593

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Coordinates	4102593.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	Ho8 O8 Sb3
Calculated formula	Ho8 O8 Sb2.95
Title of publication	Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE3SbO3 and RE8Sb3-δO8, with RE = La, Sm, Gd, and Ho
Authors of publication	Peng Wang; Scott Forbes; Taras Kolodiazhnyi; Kosuke Kosuda; Yurij Mozharivskyj
Journal of publication	Journal of the American Chemical Society
Year of publication	2010
Journal volume	132
Pages of publication	8795 - 8803
a	13.1368 ± 0.0011 Å
b	3.7609 ± 0.0002 Å
c	14.87 ± 0.0013 Å
α	90°
β	106.958 ± 0.007°
γ	90°
Cell volume	702.73 ± 0.1 Å³
Cell temperature	293 ± 2 K
Ambient diffraction temperature	293 ± 2 K
Number of distinct elements	3
Space group number	12
Hermann-Mauguin space group symbol	C 1 2/m 1
Hall space group symbol	-C 2y
Residual factor for all reflections	0.0737
Residual factor for significantly intense reflections	0.041
Weighted residual factors for significantly intense reflections	0.066
Weighted residual factors for all reflections included in the refinement	0.072
Goodness-of-fit parameter for all reflections included in the refinement	1.015
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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