Crystallography Open Database

Information card for entry 4103916

Preview

Coordinates	4103916.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	Gd5 Si4
Calculated formula	Gd5 Si4
Title of publication	Gd5Si4-xPx: Targeted Structural Changes through Increase in Valence Electron Count
Authors of publication	Volodymyr Svitlyk; Gordon J. Miller; Yurij Mozharivskyj
Journal of publication	Journal of the American Chemical Society
Year of publication	2009
Journal volume	131
Pages of publication	2367 - 2374
a	7.4743 ± 0.0005 Å
b	14.7529 ± 0.0007 Å
c	7.7424 ± 0.0004 Å
α	90°
β	90°
γ	90°
Cell volume	853.74 ± 0.08 Å³
Cell temperature	293 ± 2 K
Ambient diffraction temperature	293 ± 2 K
Number of distinct elements	2
Space group number	62
Hermann-Mauguin space group symbol	P n m a
Hall space group symbol	-P 2ac 2n
Residual factor for all reflections	0.0419
Residual factor for significantly intense reflections	0.0344
Weighted residual factors for significantly intense reflections	0.0749
Weighted residual factors for all reflections included in the refinement	0.0774
Goodness-of-fit parameter for all reflections included in the refinement	1.089
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4103916.html