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Information card for entry 4104316
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Coordinates | 4104316.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | perylen |
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Formula | C36 H6 F12 N2 O4 |
Calculated formula | C36 H6 F12 N2 O4 |
Title of publication | High-Performance Air-Stable n-Channel Organic Thin Film Transistors Based on Halogenated Perylene Bisimide Semiconductors |
Authors of publication | Rüdiger Schmidt; Joon Hak Oh; Ya-Sen Sun; Manuela Deppisch; Ana-Maria Krause; Krzysztof Radacki; Holger Braunschweig; Martin Könemann; Peter Erk; Zhenan Bao; Frank Würthner |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2009 |
Journal volume | 131 |
Pages of publication | 6215 - 6228 |
a | 31.88 ± 0.002 Å |
b | 8.5607 ± 0.0006 Å |
c | 10.1357 ± 0.0007 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 2766.2 ± 0.3 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 5 |
Space group number | 52 |
Hermann-Mauguin space group symbol | P n n a |
Hall space group symbol | -P 2a 2bc |
Residual factor for all reflections | 0.0487 |
Residual factor for significantly intense reflections | 0.0406 |
Weighted residual factors for significantly intense reflections | 0.1072 |
Weighted residual factors for all reflections included in the refinement | 0.1127 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.101 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4104316.html
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Users of the data should acknowledge the original authors of the
structural data.