Information card for entry 4104970

Structure parameters

• Formula: C50 H50 N4 Rh2 Si
• Calculated formula: C50 H50 N4 Rh2 Si
• SMILES: c12c3cccc[n]3[Rh]345([H][Rh]64([H]3)(n3c(c(c4ccccc4)cc3c3ccccc3)c3cccc[n]63)[Si]5(C(C)(C)C)C(C)(C)C)n2c(c2ccccc2)cc1c1ccccc1
• Title of publication: High Oxidation State Rhodium and Iridium Bis(silyl)dihydride Complexes Supported by a Chelating Pyridyl-Pyrrolide Ligand
• Authors of publication: Jennifer L. McBee; Jose Escalada; T. Don Tilley
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2009
• Journal volume: 131
• Pages of publication: 12703 - 12713
• a: 17.0919 ± 0.0015 Å
• b: 12.7726 ± 0.0011 Å
• c: 20.3881 ± 0.0018 Å
• α: 90°
• β: 107.434 ± 0.001°
• γ: 90°
• Cell volume: 4246.4 ± 0.6 ų
• Cell temperature: 157 ± 2 K
• Ambient diffraction temperature: 157 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0549
• Residual factor for significantly intense reflections: 0.0391
• Weighted residual factors for significantly intense reflections: 0.0955
• Weighted residual factors for all reflections included in the refinement: 0.103
• Goodness-of-fit parameter for all reflections included in the refinement: 1.024
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No