Information card for entry 4106944

Structure parameters

• Formula: C42 H77 Ge N5 P2 Si
• Calculated formula: C42 H77 Ge N5 P2 Si
• SMILES: [Ge]1([P]2(N(C(C)(C)C)[Si](N2C(C)(C)C)(C)C)C2=C(N1c1c(cccc1C(C)C)C(C)C)[C@H]1CC[C@@H]2C1)#CP(N(C(C)C)C(C)C)N(C(C)C)C(C)C.[Ge]1([P]2(N(C(C)(C)C)[Si](N2C(C)(C)C)(C)C)C2=C(N1c1c(cccc1C(C)C)C(C)C)[C@@H]1CC[C@H]2C1)#CP(N(C(C)C)C(C)C)N(C(C)C)C(C)C
• Title of publication: Synthesis and Reactivity of a Phosphine-Stabilized Monogermanium Analogue of Alkynes
• Authors of publication: Juliette Berthe; Juan Manuel Garcia; Edgar Ocando; Tsuyoshi Kato; Nathalie Saffon-Merceron; Abel De Cózar; Fernando P. Cossío; Antoine Baceiredo
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2011
• Journal volume: 133
• Pages of publication: 15930 - 15933
• a: 10.0652 ± 0.0009 Å
• b: 12.1234 ± 0.0011 Å
• c: 20.7037 ± 0.0019 Å
• α: 100.199 ± 0.005°
• β: 93.7 ± 0.004°
• γ: 100.552 ± 0.005°
• Cell volume: 2432.1 ± 0.4 ų
• Cell temperature: 193 ± 2 K
• Ambient diffraction temperature: 193 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0725
• Residual factor for significantly intense reflections: 0.0524
• Weighted residual factors for significantly intense reflections: 0.1163
• Weighted residual factors for all reflections included in the refinement: 0.1264
• Goodness-of-fit parameter for all reflections included in the refinement: 1.184
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No