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Information card for entry 4106969
Preview
Coordinates | 4106969.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C59 H60 B P3 Ru Si |
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Calculated formula | C59 H60 B P3 Ru Si |
SMILES | [RuH]123([P](c4ccccc4)(c4ccccc4)C[B](c4ccccc4)(C[P]1(c1ccccc1)c1ccccc1)C[P]2(c1ccccc1)c1ccccc1)[H][Si](c1ccccc1)(C)[H]3.Cc1ccccc1 |
Title of publication | High Electrophilicity at Silicon in η3-Silane σ-Complexes: Lewis Base Adducts of a Silane Ligand, Featuring Octahedral Silicon and Three Ru-H-Si Interactions |
Authors of publication | Mark C. Lipke; T. Don Tilley |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2011 |
Journal volume | 133 |
Pages of publication | 16374 - 16377 |
a | 18.066 ± 0.013 Å |
b | 13.115 ± 0.009 Å |
c | 21.94 ± 0.016 Å |
α | 90° |
β | 106.26 ± 0.01° |
γ | 90° |
Cell volume | 4990 ± 6 Å3 |
Cell temperature | 138 ± 2 K |
Ambient diffraction temperature | 138 ± 2 K |
Number of distinct elements | 6 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.0947 |
Residual factor for significantly intense reflections | 0.0517 |
Weighted residual factors for significantly intense reflections | 0.1216 |
Weighted residual factors for all reflections included in the refinement | 0.1423 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.181 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4106969.html
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