Information card for entry 4108851

Structure parameters

• Chemical name: 1,1,4,4-Tetrakis[bis(trimethylsilyl)methyl]-1,4-diisopropyl-2-tetrasilyne bis(trimethysilylisocyanide) complex
• Formula: C42 H108 N2 Si14
• Calculated formula: C42 H108 N2 Si14
• SMILES: [Si]([Si]([Si](C([Si](C)(C)C)[Si](C)(C)C)(C([Si](C)(C)C)[Si](C)(C)C)C(C)C)=C=N[Si](C)(C)C)([Si](C([Si](C)(C)C)[Si](C)(C)C)(C([Si](C)(C)C)[Si](C)(C)C)C(C)C)=C=N[Si](C)(C)C
• Title of publication: Reactivity of the Disilyne RSi\τbSiR (R = SiiPr[CH(SiMe3)2]2) toward Silylcyanide: Two Pathways To Form the Bis-Adduct [RSiSiR(CNSiMe3)2] with Some Silaketenimine Character and a 1,4-Diaza-2,3-disilabenzene Analogue
• Authors of publication: Katsuhiko Takeuchi; Masaaki Ichinohe; Akira Sekiguchi
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2008
• Journal volume: 130
• Pages of publication: 16848 - 16849
• a: 17.516 ± 0.0002 Å
• b: 20.988 ± 0.0004 Å
• c: 18.377 ± 0.0003 Å
• α: 90°
• β: 101.865 ± 0.001°
• γ: 90°
• Cell volume: 6611.52 ± 0.18 ų
• Cell temperature: 150 ± 0.1 K
• Ambient diffraction temperature: 150 ± 0.1 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0658
• Residual factor for significantly intense reflections: 0.0562
• Weighted residual factors for significantly intense reflections: 0.1455
• Weighted residual factors for all reflections included in the refinement: 0.1534
• Goodness-of-fit parameter for all reflections included in the refinement: 1.025
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No