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Information card for entry 4113510
Preview
Coordinates | 4113510.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | Ar*GaB(C6F5)3 |
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Formula | C54 H49 B F15 Ga |
Calculated formula | C54 H49 B F15 Ga |
SMILES | [Ga]1([B](c2c([F]1)c(F)c(F)c(F)c2F)(c1c(F)c(F)c(F)c(F)c1F)c1c(F)c(F)c(F)c(F)c1F)c1c(cccc1c1c(cc(cc1C(C)C)C(C)C)C(C)C)c1c(cc(cc1C(C)C)C(C)C)C(C)C |
Title of publication | Structures, Bonding, and Reaction Chemistry of the Neutral Organogallium(I) Compounds (GaAr)n (n= 1 or 2) (Ar = Terphenyl or Related Ligand): An Experimental Investigation of Ga-Ga Multiple Bonding |
Authors of publication | Ned J. Hardman; Robert J. Wright; Andrew D. Phillips; Philip P. Power |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2003 |
Journal volume | 125 |
Pages of publication | 2667 - 2679 |
a | 12.446 ± 0.002 Å |
b | 18.815 ± 0.004 Å |
c | 20.58 ± 0.004 Å |
α | 90° |
β | 92.692 ± 0.006° |
γ | 90° |
Cell volume | 4813.9 ± 1.6 Å3 |
Cell temperature | 90 ± 2 K |
Ambient diffraction temperature | 91 ± 2 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0849 |
Residual factor for significantly intense reflections | 0.0527 |
Weighted residual factors for significantly intense reflections | 0.127 |
Weighted residual factors for all reflections included in the refinement | 0.1508 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.01 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4113510.html
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Users of the data should acknowledge the original authors of the
structural data.