Information card for entry 4114036

Structure parameters

• Formula: C40 H82 Ge N2 O2 Si4
• Calculated formula: C40 H82 Ge N2 O2 Si4
• SMILES: [Ge]1(ON2C(CCCC2(C)C)(C)C)(ON2C(CCCC2(C)C)(C)C)C([Si](C)(C)C)([Si](C)(C)C)CCC1([Si](C)(C)C)[Si](C)(C)C.c1ccccc1
• Title of publication: Addition of Stable Nitroxide Radical to Stable Divalent Compounds of Heavier Group 14 Elements
• Authors of publication: Takeaki Iwamoto; Hidenori Masuda; Shintaro Ishida; Chizuko Kabuto; Mitsuo Kira
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2003
• Journal volume: 125
• Pages of publication: 9300 - 9301
• a: 11.4137 ± 0.0005 Å
• b: 18.2468 ± 0.0011 Å
• c: 22.1105 ± 0.0008 Å
• α: 90°
• β: 96.798 ± 0.002°
• γ: 90°
• Cell volume: 4572.4 ± 0.4 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0947
• Residual factor for significantly intense reflections: 0.0533
• Weighted residual factors for significantly intense reflections: 0.1391
• Weighted residual factors for all reflections included in the refinement: 0.1564
• Goodness-of-fit parameter for all reflections included in the refinement: 1.005
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No