Information card for entry 4114038

Structure parameters

• Formula: C32 H80 O2 Si10
• Calculated formula: C32 H80 O2 Si10
• SMILES: [Si]12(O[Si]3(O1)C([Si](C)(C)C)([Si](C)(C)C)CCC3([Si](C)(C)C)[Si](C)(C)C)C([Si](C)(C)C)([Si](C)(C)C)CCC2([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Addition of Stable Nitroxide Radical to Stable Divalent Compounds of Heavier Group 14 Elements
• Authors of publication: Takeaki Iwamoto; Hidenori Masuda; Shintaro Ishida; Chizuko Kabuto; Mitsuo Kira
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2003
• Journal volume: 125
• Pages of publication: 9300 - 9301
• a: 9.533 ± 0.002 Å
• b: 11.79 ± 0.001 Å
• c: 22.226 ± 0.003 Å
• α: 82.566 ± 0.004°
• β: 83.421 ± 0.005°
• γ: 66.981 ± 0.002°
• Cell volume: 2274.2 ± 0.6 ų
• Cell temperature: 293.1 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for significantly intense reflections: 0.0382
• Weighted residual factors for all reflections included in the refinement: 0.1066
• Goodness-of-fit parameter for all reflections included in the refinement: 1.035
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No