Information card for entry 4115709

Structure parameters

• Formula: C42 H39 B F20 P2 Si W
• Calculated formula: C43 H37 B F20 P2 Si W
• Title of publication: High Oxidation-State (Formally d0) Tungsten Silylene Complexes via Double Si-H Bond Activation
• Authors of publication: Benjamin V. Mork; T. Don Tilley
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2001
• Journal volume: 123
• Pages of publication: 9702 - 9703
• a: 27.488 ± 0.0001 Å
• b: 15.5223 ± 0.0002 Å
• c: 21.3367 ± 0.0003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 9103.88 ± 0.18 ų
• Cell temperature: 273.2 K
• Ambient diffraction temperature: 155 K
• Number of distinct elements: 7
• Space group number: 29
• Hermann-Mauguin space group symbol: P c a 21
• Hall space group symbol: P 2c -2ac
• Residual factor for all reflections: 0.0363
• Residual factor for significantly intense reflections: 0.03
• Weighted residual factors for all reflections: 0.0377
• Weighted residual factors for significantly intense reflections: 0.0366
• Goodness-of-fit parameter for all reflections included in the refinement: 1.468
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No