Information card for entry 4115708

Structure parameters

• Formula: C40 H31 B F20 P2 W
• Calculated formula: C41 H29 B F20 P2 W
• Title of publication: High Oxidation-State (Formally d0) Tungsten Silylene Complexes via Double Si-H Bond Activation
• Authors of publication: Benjamin V. Mork; T. Don Tilley
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2001
• Journal volume: 123
• Pages of publication: 9702 - 9703
• a: 15.2193 ± 0.0002 Å
• b: 15.9706 ± 0.0002 Å
• c: 17.2664 ± 0.0003 Å
• α: 90°
• β: 96.322 ± 0.001°
• γ: 90°
• Cell volume: 4171.27 ± 0.11 ų
• Cell temperature: 153.2 K
• Ambient diffraction temperature: 153.2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0668
• Residual factor for significantly intense reflections: 0.0415
• Weighted residual factors for all reflections: 0.05
• Weighted residual factors for significantly intense reflections: 0.0449
• Goodness-of-fit parameter for all reflections included in the refinement: 1.393
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No