Information card for entry 4116169

Structure parameters

• Formula: C47.5 H77 In N2 O3
• Calculated formula: C47.5 H77 In N2 O3
• Title of publication: General Synthesis of Homoleptic Indium Alkoxide Complexes and the Chemical Vapor Deposition of Indium Oxide Films
• Authors of publication: Seigi Suh; David M. Hoffman
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2000
• Journal volume: 122
• Pages of publication: 9396 - 9404
• a: 24.1308 ± 0.0013 Å
• b: 12.6401 ± 0.0007 Å
• c: 32.2968 ± 0.0018 Å
• α: 90°
• β: 102.835 ± 0.001°
• γ: 90°
• Cell volume: 9604.9 ± 0.9 ų
• Cell temperature: 223 ± 2 K
• Ambient diffraction temperature: 223 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0289
• Residual factor for significantly intense reflections: 0.0212
• Weighted residual factors for significantly intense reflections: 0.0511
• Weighted residual factors for all reflections included in the refinement: 0.0567
• Goodness-of-fit parameter for all reflections included in the refinement: 1.147
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No