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Information card for entry 4116170
Preview
Coordinates | 4116170.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C25 H49 In N2 O3 |
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Calculated formula | C25 H49 In N2 O3 |
SMILES | [In](OC(C)(CC)CC)(OC(C)(CC)CC)(OC(C)(CC)CC)[n]1ccc(N(C)C)cc1 |
Title of publication | General Synthesis of Homoleptic Indium Alkoxide Complexes and the Chemical Vapor Deposition of Indium Oxide Films |
Authors of publication | Seigi Suh; David M. Hoffman |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2000 |
Journal volume | 122 |
Pages of publication | 9396 - 9404 |
a | 14.4944 ± 0.0008 Å |
b | 16.2071 ± 0.0009 Å |
c | 12.6679 ± 0.0007 Å |
α | 90° |
β | 107.677 ± 0.001° |
γ | 90° |
Cell volume | 2835.3 ± 0.3 Å3 |
Cell temperature | 223 ± 2 K |
Ambient diffraction temperature | 223 ± 2 K |
Number of distinct elements | 5 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.025 |
Residual factor for significantly intense reflections | 0.0193 |
Weighted residual factors for significantly intense reflections | 0.0505 |
Weighted residual factors for all reflections included in the refinement | 0.0552 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.108 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4116170.html
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