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Information card for entry 4117838
Preview
| Coordinates | 4117838.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C48 H50 S2 Si |
|---|---|
| Calculated formula | C48 H50 S2 Si |
| SMILES | S([Si]Sc1c(cccc1c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C)c1c(cccc1c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C |
| Title of publication | Isolation of a Stable, Acyclic, Two-Coordinate Silylene |
| Authors of publication | Brian D. Rekken; Thomas M. Brown; James C. Fettinger; Heikki M. Tuononen; Philip P. Power |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2012 |
| Journal volume | 134 |
| Pages of publication | 6504 - 6507 |
| a | 13.3874 ± 0.0007 Å |
| b | 18.7441 ± 0.001 Å |
| c | 15.9982 ± 0.0008 Å |
| α | 90° |
| β | 95.207 ± 0.001° |
| γ | 90° |
| Cell volume | 3997.9 ± 0.4 Å3 |
| Cell temperature | 90 ± 2 K |
| Ambient diffraction temperature | 90 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.0438 |
| Residual factor for significantly intense reflections | 0.0357 |
| Weighted residual factors for significantly intense reflections | 0.0937 |
| Weighted residual factors for all reflections included in the refinement | 0.0991 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.052 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4117838.html
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Users of the data should acknowledge the original authors of the
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