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Information card for entry 4121130
Preview
| Coordinates | 4121130.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C20 H20 F6 P S12 |
|---|---|
| Calculated formula | C20 H20 F6 P S12 |
| SMILES | C1=CSC(S1)=C1SC2=C(S1)S[C@@H]([C@H](S2)C)C.[P](F)(F)(F)(F)(F)[F-].C1=CSC(=C2SC3=C(S2)S[C@H]([C@@H](S3)C)C)S1 |
| Title of publication | Chirality Driven Metallic versus Semiconducting Behavior in a Complete Series of Radical Cation Salts Based on Dimethyl-Ethylenedithio-Tetrathiafulvalene (DM-EDT-TTF) |
| Authors of publication | Flavia Pop; Pascale Auban-Senzier; Arkadiusz Frąckowiak; Krzysztof Ptaszyński; Iwona Olejniczak; John D. Wallis; Enric Canadell; Narcis Avarvari |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2013 |
| Journal volume | 135 |
| Pages of publication | 17176 - 17186 |
| a | 6.5771 ± 0.0005 Å |
| b | 8.3478 ± 0.001 Å |
| c | 15.004 ± 0.003 Å |
| α | 83.296 ± 0.013° |
| β | 77.863 ± 0.011° |
| γ | 67.014 ± 0.01° |
| Cell volume | 740.88 ± 0.19 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0802 |
| Residual factor for significantly intense reflections | 0.0505 |
| Weighted residual factors for significantly intense reflections | 0.1096 |
| Weighted residual factors for all reflections included in the refinement | 0.1236 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.046 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4121130.html
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Users of the data should acknowledge the original authors of the
structural data.