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Information card for entry 4125117
Preview
Coordinates | 4125117.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C19 H29 F3 N2 O5 S |
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Calculated formula | C18.9999 H29 F2.9997 N2 O4.9997 S0.9999 |
Title of publication | Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces. |
Authors of publication | Zhukhovitskiy, Aleksandr V.; Mavros, Michael G.; Queeney, K. T.; Wu, Tony; Voorhis, Troy Van; Johnson, Jeremiah A. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2016 |
Journal volume | 138 |
Journal issue | 27 |
Pages of publication | 8639 - 8652 |
a | 12.6127 ± 0.0008 Å |
b | 15.2311 ± 0.001 Å |
c | 17.9955 ± 0.0011 Å |
α | 69.5328 ± 0.0015° |
β | 88.0275 ± 0.0013° |
γ | 88.8565 ± 0.0013° |
Cell volume | 3236.8 ± 0.4 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 6 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0527 |
Residual factor for significantly intense reflections | 0.0391 |
Weighted residual factors for significantly intense reflections | 0.1002 |
Weighted residual factors for all reflections included in the refinement | 0.1081 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.025 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | Yes |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4125117.html
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Users of the data should acknowledge the original authors of the
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