Information card for entry 4125118

Structure parameters

• Formula: C32 H63 N Si4
• Calculated formula: C32 H63 N Si4
• SMILES: N1(C(CC2(CCCCC2)C1[Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(C)C)c1c(cccc1C(C)C)C(C)C
• Title of publication: Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces.
• Authors of publication: Zhukhovitskiy, Aleksandr V.; Mavros, Michael G.; Queeney, K. T.; Wu, Tony; Voorhis, Troy Van; Johnson, Jeremiah A.
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2016
• Journal volume: 138
• Journal issue: 27
• Pages of publication: 8639 - 8652
• a: 12.4987 ± 0.0005 Å
• b: 16.0655 ± 0.0007 Å
• c: 17.6184 ± 0.0007 Å
• α: 90°
• β: 94.9451 ± 0.0009°
• γ: 90°
• Cell volume: 3524.6 ± 0.3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0339
• Residual factor for significantly intense reflections: 0.0286
• Weighted residual factors for significantly intense reflections: 0.0749
• Weighted residual factors for all reflections included in the refinement: 0.0784
• Goodness-of-fit parameter for all reflections included in the refinement: 1.035
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No