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Information card for entry 4125119
Preview
Coordinates | 4125119.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C25 H29 F3 N2 O5 S |
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Calculated formula | C25 H29 F3 N2 O5 S |
SMILES | O=C1C(C(=O)[N+](=CN1c1c(cc(cc1C)C)C)c1c(cc(cc1C)C)C)(C)C.S(=O)(=O)([O-])C(F)(F)F |
Title of publication | Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces. |
Authors of publication | Zhukhovitskiy, Aleksandr V.; Mavros, Michael G.; Queeney, K. T.; Wu, Tony; Voorhis, Troy Van; Johnson, Jeremiah A. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2016 |
Journal volume | 138 |
Journal issue | 27 |
Pages of publication | 8639 - 8652 |
a | 8.7865 ± 0.0008 Å |
b | 21.4221 ± 0.0018 Å |
c | 13.4402 ± 0.0011 Å |
α | 90° |
β | 94.5721 ± 0.0017° |
γ | 90° |
Cell volume | 2521.7 ± 0.4 Å3 |
Cell temperature | 100 ± 2 K |
Ambient diffraction temperature | 100 ± 2 K |
Number of distinct elements | 6 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0528 |
Residual factor for significantly intense reflections | 0.0419 |
Weighted residual factors for significantly intense reflections | 0.102 |
Weighted residual factors for all reflections included in the refinement | 0.1081 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.058 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4125119.html
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Users of the data should acknowledge the original authors of the
structural data.