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Information card for entry 4127808
Preview
Coordinates | 4127808.cif |
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Original paper (by DOI) | HTML |
Chemical name | 5,9,14,18-tetrabutyl-bisnaphtho[2',3':3,4]cyclobut[1,2-b:1',2'-i]anthracene |
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Formula | C50 H50 |
Calculated formula | C50 H50 |
SMILES | c12ccccc1c(c1c3cc4cc5c(cc6c7c(c8c(cccc8)c(c7c6c5)CCCC)CCCC)cc4cc3c1c2CCCC)CCCC |
Title of publication | Crystal Engineering of Biphenylene-Containing Acenes for High-Mobility Organic Semiconductors. |
Authors of publication | Wang, Jinlian; Chu, Ming; Fan, Jian-Xun; Lau, Tsz-Ki; Ren, Ai-Min; Lu, Xinhui; Miao, Qian |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2019 |
Journal volume | 141 |
Journal issue | 8 |
Pages of publication | 3589 - 3596 |
a | 5.2757 ± 0.0002 Å |
b | 12.2737 ± 0.0005 Å |
c | 14.991 ± 0.0007 Å |
α | 75.6814 ± 0.0014° |
β | 84.387 ± 0.0013° |
γ | 80.6867 ± 0.0012° |
Cell volume | 926.45 ± 0.07 Å3 |
Cell temperature | 298 ± 2 K |
Ambient diffraction temperature | 298 ± 2 K |
Number of distinct elements | 2 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.1057 |
Residual factor for significantly intense reflections | 0.0807 |
Weighted residual factors for significantly intense reflections | 0.2243 |
Weighted residual factors for all reflections included in the refinement | 0.26 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.032 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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