Information card for entry 4127808
| Chemical name |
5,9,14,18-tetrabutyl-bisnaphtho[2',3':3,4]cyclobut[1,2-b:1',2'-i]anthracene |
| Formula |
C50 H50 |
| Calculated formula |
C50 H50 |
| SMILES |
c12ccccc1c(c1c3cc4cc5c(cc6c7c(c8c(cccc8)c(c7c6c5)CCCC)CCCC)cc4cc3c1c2CCCC)CCCC |
| Title of publication |
Crystal Engineering of Biphenylene-Containing Acenes for High-Mobility Organic Semiconductors. |
| Authors of publication |
Wang, Jinlian; Chu, Ming; Fan, Jian-Xun; Lau, Tsz-Ki; Ren, Ai-Min; Lu, Xinhui; Miao, Qian |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2019 |
| Journal volume |
141 |
| Journal issue |
8 |
| Pages of publication |
3589 - 3596 |
| a |
5.2757 ± 0.0002 Å |
| b |
12.2737 ± 0.0005 Å |
| c |
14.991 ± 0.0007 Å |
| α |
75.6814 ± 0.0014° |
| β |
84.387 ± 0.0013° |
| γ |
80.6867 ± 0.0012° |
| Cell volume |
926.45 ± 0.07 Å3 |
| Cell temperature |
298 ± 2 K |
| Ambient diffraction temperature |
298 ± 2 K |
| Number of distinct elements |
2 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.1057 |
| Residual factor for significantly intense reflections |
0.0807 |
| Weighted residual factors for significantly intense reflections |
0.2243 |
| Weighted residual factors for all reflections included in the refinement |
0.26 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.032 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4127808.html