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Information card for entry 4127809
Preview
| Coordinates | 4127809.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Chemical name | 5,9,14,18-tetrahexyl-bisnaphtho[2',3':3,4]cyclobut[1,2-b:1',2'-i]anthracene |
|---|---|
| Formula | C58 H66 |
| Calculated formula | C58 H66 |
| Title of publication | Crystal Engineering of Biphenylene-Containing Acenes for High-Mobility Organic Semiconductors. |
| Authors of publication | Wang, Jinlian; Chu, Ming; Fan, Jian-Xun; Lau, Tsz-Ki; Ren, Ai-Min; Lu, Xinhui; Miao, Qian |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2019 |
| Journal volume | 141 |
| Journal issue | 8 |
| Pages of publication | 3589 - 3596 |
| a | 7.457 ± 0.0004 Å |
| b | 17.701 ± 0.0011 Å |
| c | 18.1186 ± 0.001 Å |
| α | 73.7794 ± 0.0017° |
| β | 78.4187 ± 0.0018° |
| γ | 79.3591 ± 0.0019° |
| Cell volume | 2228.5 ± 0.2 Å3 |
| Cell temperature | 173 ± 2 K |
| Ambient diffraction temperature | 173 ± 2 K |
| Number of distinct elements | 2 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0978 |
| Residual factor for significantly intense reflections | 0.0717 |
| Weighted residual factors for significantly intense reflections | 0.1775 |
| Weighted residual factors for all reflections included in the refinement | 0.1945 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.061 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
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