Information card for entry 4127989

Structure parameters

• Formula: C32 H48 I8 N4 Sn2
• Calculated formula: C32 H48 I8 N4 Sn2
• Title of publication: Highly Stable Lead-Free Perovskite Field-Effect Transistors Incorporating Linear π-Conjugated Organic Ligands.
• Authors of publication: Gao, Yao; Wei, Zitang; Yoo, Pilsun; Shi, Enzheng; Zeller, Matthias; Zhu, Chenhui; Liao, Peilin; Dou, Letian
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2019
• Journal volume: 141
• Journal issue: 39
• Pages of publication: 15577 - 15585
• a: 8.6484 ± 0.0005 Å
• b: 8.6467 ± 0.0005 Å
• c: 32.461 ± 0.002 Å
• α: 85.1499 ± 0.0017°
• β: 85.1329 ± 0.0018°
• γ: 89.5023 ± 0.0016°
• Cell volume: 2410 ± 0.2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0365
• Residual factor for significantly intense reflections: 0.0312
• Weighted residual factors for significantly intense reflections: 0.0814
• Weighted residual factors for all reflections included in the refinement: 0.0842
• Goodness-of-fit parameter for all reflections included in the refinement: 1.221
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No