Information card for entry 4129737

Structure parameters

• Formula: C30 H52 Ni O4 P2 Si2
• Calculated formula: C30 H52 Ni O4 P2 Si2
• Title of publication: Reactions of Phenylhydrosilanes with Pincer-Nickel Complexes: Evidence for New Si-O and Si-C Bond Formation Pathways.
• Authors of publication: Hao, Jingjun; Vabre, Boris; Zargarian, Davit
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2015
• Journal volume: 137
• Journal issue: 48
• Pages of publication: 15287 - 15298
• a: 17.5124 ± 0.0006 Å
• b: 12.2425 ± 0.0004 Å
• c: 18.1131 ± 0.0006 Å
• α: 90°
• β: 114.634 ± 0.002°
• γ: 90°
• Cell volume: 3529.9 ± 0.2 ų
• Cell temperature: 100 K
• Ambient diffraction temperature: 100 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0745
• Residual factor for significantly intense reflections: 0.0646
• Weighted residual factors for significantly intense reflections: 0.1668
• Weighted residual factors for all reflections included in the refinement: 0.1743
• Goodness-of-fit parameter for all reflections included in the refinement: 1.066
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No