Information card for entry 4129760

Structure parameters

• Common name: Manganese silicon carbide
• Formula: C4 Mn16 Si
• Calculated formula: C4 Mn16 Si
• Title of publication: Epitaxial Stabilization between Intermetallic and Carbide Domains in the Structures of Mn16SiC4 and Mn17Si2C4.
• Authors of publication: Fredrickson, Rie T.; Guo, Yiming; Fredrickson, Daniel C.
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2016
• Journal volume: 138
• Journal issue: 1
• Pages of publication: 248 - 256
• a: 10.28 ± 0.003 Å
• b: 7.7913 ± 0.0019 Å
• c: 6.3715 ± 0.0016 Å
• α: 90°
• β: 119.12 ± 0.03°
• γ: 90°
• Cell volume: 445.8 ± 0.2 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 12
• Hermann-Mauguin space group symbol: C 1 2/m 1
• Hall space group symbol: -C 2y
• Residual factor for all reflections: 0.0466
• Residual factor for significantly intense reflections: 0.0265
• Weighted residual factors for significantly intense reflections: 0.0459
• Weighted residual factors for all reflections included in the refinement: 0.0536
• Goodness-of-fit parameter for significantly intense reflections: 1.11
• Goodness-of-fit parameter for all reflections included in the refinement: 1.12
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No