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Information card for entry 4129761
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Coordinates | 4129761.cif |
---|---|
Original paper (by DOI) | HTML |
Common name | Manganese silicon carbide |
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Formula | C4 Mn17 Si2 |
Calculated formula | C4 Mn17 Si2 |
Title of publication | Epitaxial Stabilization between Intermetallic and Carbide Domains in the Structures of Mn16SiC4 and Mn17Si2C4. |
Authors of publication | Fredrickson, Rie T.; Guo, Yiming; Fredrickson, Daniel C. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2016 |
Journal volume | 138 |
Journal issue | 1 |
Pages of publication | 248 - 256 |
a | 6.4114 ± 0.0009 Å |
b | 7.6648 ± 0.0005 Å |
c | 10.4946 ± 0.0016 Å |
α | 90° |
β | 106.247 ± 0.013° |
γ | 90° |
Cell volume | 495.13 ± 0.11 Å3 |
Cell temperature | 293 K |
Ambient diffraction temperature | 293 K |
Number of distinct elements | 3 |
Space group number | 11 |
Hermann-Mauguin space group symbol | P 1 21/m 1 |
Hall space group symbol | -P 2yb |
Residual factor for all reflections | 0.0505 |
Residual factor for significantly intense reflections | 0.0329 |
Weighted residual factors for significantly intense reflections | 0.0338 |
Weighted residual factors for all reflections included in the refinement | 0.0383 |
Goodness-of-fit parameter for significantly intense reflections | 1.19 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.16 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4129761.html
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