Information card for entry 4131767

Structure parameters

• Formula: C24 H60 Bi2 N4 O2 S Si4
• Calculated formula: C24 H60 Bi2 N4 O2 S Si4
• SMILES: [Bi]1(S[Bi]2N([Si](O[Si](N2C(C)(C)C)(C)C)(C)C)C(C)(C)C)N([Si](O[Si](N1C(C)(C)C)(C)C)(C)C)C(C)(C)C
• Title of publication: Bismuth(III) Complex of the [S₄]^•- Radical Anion: Dimer Formation via Pancake Bonds.
• Authors of publication: Schwamm, Ryan J.; Lein, Matthias; Coles, Martyn P.; Fitchett, Christopher M.
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2017
• Journal volume: 139
• Journal issue: 46
• Pages of publication: 16490 - 16493
• a: 8.2256 ± 0.0003 Å
• b: 13.5394 ± 0.0005 Å
• c: 18.0192 ± 0.0006 Å
• α: 101.127 ± 0.003°
• β: 91.135 ± 0.003°
• γ: 101.759 ± 0.003°
• Cell volume: 1924.09 ± 0.12 ų
• Cell temperature: 120.01 ± 0.1 K
• Ambient diffraction temperature: 120.01 ± 0.1 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0454
• Residual factor for significantly intense reflections: 0.0334
• Weighted residual factors for significantly intense reflections: 0.0595
• Weighted residual factors for all reflections included in the refinement: 0.0647
• Goodness-of-fit parameter for all reflections included in the refinement: 1.007
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No