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Information card for entry 4131768
Preview
Coordinates | 4131768.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C24 H60 Bi2 N4 O2 S3 Si4 |
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Calculated formula | C24 H60 Bi2 N4 O2 S3 Si4 |
SMILES | O1[Si](C)(C)N([Bi](N(C(C)(C)C)[Si]1(C)C)SSS[Bi]1N(C(C)(C)C)[Si](O[Si](C)(C)N1C(C)(C)C)(C)C)C(C)(C)C |
Title of publication | Bismuth(III) Complex of the [S<sub>4</sub>]<sup>•-</sup> Radical Anion: Dimer Formation via Pancake Bonds. |
Authors of publication | Schwamm, Ryan J.; Lein, Matthias; Coles, Martyn P.; Fitchett, Christopher M. |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2017 |
Journal volume | 139 |
Journal issue | 46 |
Pages of publication | 16490 - 16493 |
a | 13.4362 ± 0.0005 Å |
b | 10.8026 ± 0.0004 Å |
c | 28.5609 ± 0.0008 Å |
α | 90° |
β | 92.026 ± 0.003° |
γ | 90° |
Cell volume | 4142.9 ± 0.2 Å3 |
Cell temperature | 120 ± 0.1 K |
Ambient diffraction temperature | 120 ± 0.1 K |
Number of distinct elements | 7 |
Space group number | 15 |
Hermann-Mauguin space group symbol | I 1 2/a 1 |
Hall space group symbol | -I 2ya |
Residual factor for all reflections | 0.0639 |
Residual factor for significantly intense reflections | 0.0498 |
Weighted residual factors for significantly intense reflections | 0.1204 |
Weighted residual factors for all reflections included in the refinement | 0.128 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.081 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/4131768.html
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