Information card for entry 4133582

Structure parameters

• Formula: C55 H64 N4 O Si2
• Calculated formula: C55 H64 N4 O Si2
• SMILES: [Si]12([Si]3(OC2(c2ccccc2)c2ccccc2)([N](=C(N3C(C)(C)C)c2ccccc2)C(C)(C)C)c2c3c1ccc1c3c(cc2)CC1)N(C(=N\C(C)(C)C)\c1ccccc1)C(C)(C)C
• Title of publication: Geometrically Compelled Disilene with λ⁴-Coordinate Si^II Atoms.
• Authors of publication: Kostenko, Arseni; Driess, Matthias
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2018
• Journal volume: 140
• Journal issue: 49
• Pages of publication: 16962 - 16966
• a: 12.6253 ± 0.0004 Å
• b: 12.9455 ± 0.0005 Å
• c: 16.4249 ± 0.0005 Å
• α: 83.107 ± 0.003°
• β: 84.228 ± 0.003°
• γ: 66.911 ± 0.003°
• Cell volume: 2447.4 ± 0.15 ų
• Cell temperature: 150 ± 0.1 K
• Ambient diffraction temperature: 150 ± 0.1 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0454
• Residual factor for significantly intense reflections: 0.0374
• Weighted residual factors for significantly intense reflections: 0.096
• Weighted residual factors for all reflections included in the refinement: 0.1021
• Goodness-of-fit parameter for all reflections included in the refinement: 1.03
• Diffraction radiation wavelength: 1.54184 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No