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Information card for entry 4133583
Preview
| Coordinates | 4133583.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C42 H54 N4 Si2 |
|---|---|
| Calculated formula | C42 H54 N4 Si2 |
| SMILES | c1c(C2=[N](C(C)(C)C)[Si]3(N2C(C)(C)C)c2c4c(ccc5c4c(cc2)CC5)[Si]23[N](=C(c3ccccc3)N2C(C)(C)C)C(C)(C)C)cccc1 |
| Title of publication | Geometrically Compelled Disilene with λ<sup>4</sup>-Coordinate Si<sup>II</sup> Atoms. |
| Authors of publication | Kostenko, Arseni; Driess, Matthias |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2018 |
| Journal volume | 140 |
| Journal issue | 49 |
| Pages of publication | 16962 - 16966 |
| a | 14.12662 ± 0.00014 Å |
| b | 10.49281 ± 0.00011 Å |
| c | 25.5869 ± 0.0003 Å |
| α | 90° |
| β | 94.5089 ± 0.0009° |
| γ | 90° |
| Cell volume | 3780.96 ± 0.07 Å3 |
| Cell temperature | 150 ± 0.1 K |
| Ambient diffraction temperature | 150 ± 0.1 K |
| Number of distinct elements | 4 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.037 |
| Residual factor for significantly intense reflections | 0.0351 |
| Weighted residual factors for significantly intense reflections | 0.0985 |
| Weighted residual factors for all reflections included in the refinement | 0.1005 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.085 |
| Diffraction radiation wavelength | 1.54184 Å |
| Diffraction radiation type | CuKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4133583.html
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